The RF GaN Market is expected to grow from USD 337.28 million in 2017 to USD 992.38 million by 2023, at a compound annual growth rate (CAGR) of 19.71% during the forecast period. Increasing adoption of electric vehicles and transition towards 5G technology are the primary factors driving the global RF GaN market.
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RF GaN market Key Company Analyzed In Report Are:
The prominent players in the RF GaN market are NXP Semiconductors NV (Netherlands), Analog Devices Inc. (US), RFHIC Corporation (South Korea) and Mitsubishi Electric Corporation (Japan).
Other players in the RF GaN market are Aethercomm Inc. (US), Microsemi Corporation (US), Cree Inc. (US), STMicroelectronics NV(Switzerland), Toshiba Corporation (Japan), M/A-COM Technology Solutions Holdings Inc. (US), and Qorvo Inc (US).
RF Gallium Nitride (GaN) is expected to have a promising growth in the market the next few years. It bridges the gap between two older technologies, exhibiting the high-frequency performance of gallium arsenide combined with the power handling capabilities of laterally diffused metal oxide semiconductors(LDMOS). It is a mainstream technology which has now achieved measurable market share and is expected to capture a significant part of the market in future. The strongest sector in the RF power semiconductor adoption business, outside of defense, is commercial avionics and air traffic control. GaN power amplifiers are now finding their use in cellular base stations. GaN material with higher power, better linearity, more frequency bands and improved efficiency are driving current developments in the RF semiconductor devices market. Defense remains an important market for GaN, and more and more new products and designs are benefiting from GaN’s superior performance and design simplification. There is a steady growing penetration rate for GaN in defense market applications like IED jammers, military communications, radar, electronic warfare, and more
By material, the market is segmented into GaN-on-SiC and GaN-on-Silicon.
By application, the market is segmented into wireless infrastructure, aerospace and defense and others.
By region, the market is segmented into North America, Europe, Asia-Pacific, and the rest of the world.
The global market for RF GaN is estimated to grow at a significant rate during the forecast period from 2018 to 2023. The geographical analysis of RF GaN market is studied for North America, Europe, Asia-Pacific, and the rest of the world.
North America dominates the RF GaN market and holds a significant market share due to its increasing investments in defense and aerospace industry. The US government is also promoting the adoption of energy-efficient devices and are undertaking substantial measures towards this direction.
Asia-Pacific is expected to emerge as the fastest growing region over the forecast period, due to rapid technological advancements that are fueling the demand for efficient and high-performance RF components. Increasing demand for better cellular networks from countries such as China, India, South Korea, Taiwan, and Malaysia are expected to drive RF GaN market in this region.
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TABLE OF CONTENTS
1 Executive Summary
2 Scope Of The Report
2.1 Market Definition
2.2 Scope Of The Study
2.2.1 Research Objectives
2.2.2 Assumptions & Limitations
2.3 Markets Structure
3 Market Research Methodology
3.1 Research Process
3.2 Secondary Research
3.3 Primary Research
3.4 Forecast Model
LIST OF TABLES
Table 1 Global RF GaN Market, By Region, 2018–2023
Table 2 North America: RF GaN Market, By Country, 2018–2023
Table 3 Europe: RF GaN Market, By Country, 2018–2023
Table 4 Asia-Pacific: RF GaN Market, By Country, 2018–2023
Table 5 Middle East & Africa: RF GaN Market, By Country, 2018–2023
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LIST OF FIGURES
FIGURE 1 Global RF GaN Market Segmentation
FIGURE 2 Forecast Methodology
FIGURE 3 Porter’s Five Forces Analysis Of Global RF GaN Market
FIGURE 4 Value Chain Of Global RF GaN Market
FIGURE 5 Share Of Global RF GaN Market In 2017, By Country (In %)
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