New York, October 08, 2018: The next generation memory technologies market has shown substantial growth in recent times as a result of the growing demand for quicker, economical and price effective memory solutions. the need for memory solutions that may serve applications in varied areas effectively is rising. The aim of this report is to produce an insight on the world next generation memory technologies markets current and projected trends and to hold out an exhaustive analysis of market potentials accessible. The report analyses opportunities within the developed and rising economies in order that corporations will build strategic selections and gain competitive edge.
The Next-Generation Memory Market is expected to exceed more than US$ 8.5 Billion by 2024 at a CAGR of 27% in the given forecast period.
The scope of the report includes a detailed study of Next-Generation Memory Market with the reasons given for variations in the growth of the industry in certain regions.
The report covers detailed competitive outlook including the market share and company profiles of the key participants operating in the global market. Key players profiled in the report include Samsung electronics, Crossbar Inc., Fujitsu Ltd, Micron technology, Inc., SK Hynix, Inc., Future electronics and others. Company profile includes assign such as company summary, financial summary, business strategy and planning, SWOT analysis and current developments.
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This report provides:
1) An overview of the global market for Next-Generation Memory Market and related technologies.
2) Analyses of global market trends, with data from 2015, estimates for 2016 and 2017, and projections of compound annual growth rates (CAGRs) through 2024.
3) Identifications of new market opportunities and targeted promotional plans for Next-Generation Memory Market
4) Discussion of research and development, and the demand for new products and new applications.
5) Comprehensive company profiles of major players in the industry.
The Next-Generation Memory Market has been segmented as below:
The Next-Generation Memory Market is segmented on the Basis of Application Type, Product Type and Regional Analysis. By Application Type this market is segmented on the basis of Smart Cards, Mass Storage, Industrial Applications, Mobile Phones, Aerospace and Defence, Consumer Electronics and Automotive Electronics.
By Product Type this market is segmented on the basis of Volatile Next Generation Memory Technologies, Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), Non Volatile Next Generation Memory Technologies, Ferroelectric RAM (FeRAM), Resistive Random Access Memory (Re RAM), Phase Change Memory (PCM) and Magneto-Resistive Random Access Memory (MRAM). By Regional Analysis this market is segmented on the basis of North America, Europe, Asia Pacific, Latin America, Middle East and Africa.
The major driving factors of Next-Generation Memory Market are as follows:
- Need for top information measure, Low Power Consumption, and extremely scalable device for Technologies like AI (AI), web of Things (IoT), and large information
- Demand for Universal Memory Devices
- Increasing Demand for Enterprise Storage Applications
The major restraining factors of Next-Generation Memory Market are as follows:
- Problems with Storage in Niche Application and High price of rising Memory Technologies
- Lack of Stability Beneath Extreme Environmental Conditions
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Table of Contents
- Research Methodology
- Summary with Insights
- Market Overview
4.4 Industry Trends
4.5 Porter’s Five Forces Analysis
- Next-Generation Memory Market Analysis, By Application
5.1 Automotive Electronics
5.2 Smart Cards
5.3 Mass Storage
5.4 Industrial Applications
5.5 Consumer Electronics
5.6 Mobile Phones
5.7 Aerospace and Defence
- Next-Generation Memory Market Analysis, By End-User
- Next-Generation Memory Market Analysis, By Region
- Competitive Overview
- Company Profiles
9.2 Samsung Electronics
9.3 Texas Instruments
9.4 Cypress Semiconductor
9.6 Micron Technology
9.7 ROHM Semiconductor
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Contact Person: John Bay
Country: United States
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